NCERT Solutions
Class 12 • Semiconductor Electronics • Q14.1 – Q14.6(a) Electrons are majority carriers and trivalent atoms are the dopants.
(b) Electrons are minority carriers and pentavalent atoms are the dopants.
(c) Holes are minority carriers and pentavalent atoms are the dopants.
(d) Holes are majority carriers and trivalent atoms are the dopants.
- n-type: Created by doping Silicon (Group 14) with Pentavalent impurity (Group 15, e.g., Arsenic, Phosphorus).
- Pentavalent atoms: Have 5 valence electrons. 4 form bonds, 1 is free. Thus, they donate electrons.
- Carriers: Electrons are Majority carriers. Holes are Minority carriers.
Statement (c) says: “Holes are minority carriers and pentavalent atoms are the dopants.” This is correct.
- p-type: Created by doping Silicon (Group 14) with Trivalent impurity (Group 13, e.g., Boron, Aluminium).
- Trivalent atoms: Have 3 valence electrons. They create a vacancy (hole) to accept an electron.
- Carriers: Holes are Majority carriers. Electrons are Minority carriers.
Looking at options from 14.1:
- (d) Holes are majority carriers and trivalent atoms are the dopants.
(a) \((E_g)_{Si} < (E_g)_{Ge} < (E_g)_C\)
(b) \((E_g)_C < (E_g)_{Ge} > (E_g)_{Si}\)
(c) \((E_g)_C > (E_g)_{Si} > (E_g)_{Ge}\)
(d) \((E_g)_C = (E_g)_{Si} = (E_g)_{Ge}\)
The energy band gap depends on the strength of the atomic bonding and the size of the atom.
- Carbon (Diamond): Insulator. Very strong bonds. \(E_g \approx 5.4 \text{ eV}\).
- Silicon: Semiconductor. \(E_g \approx 1.1 \text{ eV}\).
- Germanium: Semiconductor. Larger atom, weaker hold. \(E_g \approx 0.7 \text{ eV}\).
Order: Carbon > Silicon > Germanium.
(a) free electrons in the n-region attract them.
(b) they move across the junction by the potential difference.
(c) hole concentration in p-region is more as compared to n-region.
(d) All the above.
Diffusion is the movement of particles from a region of higher concentration to a region of lower concentration.
- In a p-n junction, the p-side has a high concentration of holes, while the n-side has very few holes.
- This concentration gradient drives the holes to diffuse from p to n.
- It is not primarily due to attraction or potential difference (in fact, the potential barrier eventually stops this diffusion).
(a) raises the potential barrier.
(b) reduces the majority carrier current to zero.
(c) lowers the potential barrier.
(d) None of the above.
In forward bias, the positive terminal is connected to the p-side and negative to the n-side.
- The applied external field opposes the built-in potential field.
- This lowers the effective potential barrier width and height.
- This allows majority charge carriers to cross the junction easily, causing current flow.
A half-wave rectifier conducts only during the positive half-cycle. It produces one output pulse for every one input cycle. The time period remains the same.
Output Frequency = Input Frequency = 50 Hz.
A full-wave rectifier converts both positive and negative half-cycles into positive output pulses. It produces two output pulses for every one input cycle.
Output Frequency = \(2 \times\) Input Frequency = \(2 \times 50\) = 100 Hz.
Full-wave: 100 Hz